CMS ECAL APD quality assurance facility
Alexander Singovski, University of Minnesota, Minneapolis, USA
K. Deiters,Q.Ingram,D.Renker,T. Sakhelashvili,B. Patel, R. Rusack, A. Singovski, P. Vikas, Y. Musienko,S. Nicol,S. Reucroft,J. Swain

Measurements of Radiation Effects on the Timing, Trigger and Control Receiver (TTCrx) ASIC
Thomas Toifl, CERN, Geneva, Switzerland
T. Toifl, P. Moreira and A. Marchioro

Results of Radiation Test of the Cathode Front-end Board for CMS Endcap Muon Chambers
Ta-Yung Ling, The Ohio State University, Columbus, Ohio, USA
B. Bylsma, L.S. Durkin, J. Gu, T.Y. Ling, M. Tripathi

Radiation Tolerance Evaluation of the ATLAS RPC Coincidence Matrix Submicron Technology
Riccardo Vari, INFN, Roma, Italy
E. Gennari, E. Petrolo, A. Salamon, R. Vari, S. Veneziano

First Evaluation of Neutron Induced Single Event Effects on the CMS Barrel Muon Electronics
Pierluigi Zotto, Politecnico, Milano, Italy and INFN, Padova, Italy
S. Agosteo, L. Castellani, G. D’Angelo, A. Favalli, I. Lippi, R. Martinelli and P. Zotto

Single Event Upset tests of an 80Mbit/s optical receiver
Federico Faccio, CERN, Geneva, Switzerland
F. Faccio, G. Berger, K. Gill, M. Huhtinen, A. Marchioro, P. Moreira, F. Vasey

Redundancy or GaAs? Two different approaches to solve the problem of SEU (Single Event Upset ) in a Digital Optical Link.
Bernard Dinkespiler, Southern Methodist University, Dallas, TX, USA
M.-L. Andrieux, B. Dinkespiler, L. Gallin-Martel, J. Lundquist, M. Pearce, F. Rethore, S. Rydstrom, R. Stroynowski, S. Xie, J. Ye

Single Event Effect Measurements on the Resistive Plate Chambers Front-End Chips for the CMS Experiment
Antonio Ranieri, Università e INFN, Bari, Italy
M. Abbrescia, S. Altieri, G. Belli, G. Bruno, A. Colaleo, R. Guida, G. Iaselli, F. Loddo, M. Maggi, B. Marangelli, S. Natali, S. Nuzzo, G. Pugliese, A. Ranieri , S.P. Ratti, C. Riccardi, F. Romano, P. Torre, P. Vitulo

Single Event Upset Studies on the APV25 Front End Readout Chip
Jonathan Fulcher, Imperial College, London, UK
JR Fulcher, D Bisello, F Faccio, M French, G Hall, M Huhtinen, L Jones, E Noah, M Raymond, A Paccagnella, J Wyss

Overview of ATLAS LAr Radiation Tolerance
Christophe de La Taille, LAL, Orsay, France

Overview of the ATLAS Policy on Radiation Tolerant Electronics
Martin Dentan, CERN, Geneva, Switzerland and CEA-DAPNIA, Gif-sur-Yvette, France
on behalf of the ATLAS Radiation Hardness Assurance Working Group

Instrumentation Amplifiers and Voltage Controlled Current Sources for LHC cryogenic Instrumentation
Juan Agapito, Universidad Complutense (UCM), Electronics Dept., Madrid, Spain
J.A. Agapito , N.P. Barradas, F.M. Cardeira , J.  Casas , A.P. Fernandes , F.J. Franco, P. Gomes,  I.C. Goncalves , A.H. Cachero , J. Lozano, M.A. Martin, J.G. Marques, A. Paz , M.J. Prata, A.J.G. Ramalho, M.A. Rodriguez Ruiz, J.P.  Santos and A. Vieira

Developments for Radiation Hard Silicon Detectors by Defect Engineering - Results by the CERN RD48 (ROSE) Collaboration
Gunnar Lindstroem, University of Hamburg, Germany
on behalf of the CERN RD48 (ROSE) Collaboration